| PART |
Description |
Maker |
| STGE50NC60VD |
N-channel 50A - 600V - ISOTOP Very fast PowerMESTM IGBT
|
STMicroelectronics
|
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STGY50NB60HD 6716 STGY50NB60 |
N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT
From old datasheet system
N-CHANNEL 50A - 600V MAX247 PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGY50NC60WD GY50NC60WD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| RHRU5060 RHRU5050 FN3919 RHRU5040 |
50A, 400V - 600V Hyperfast Diodes
50A 400V - 600V Hyperfast Diodes
From old datasheet system
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| STE40NK90ZD |
N-CHANNEL 900V - 0.14 - 40 A ISOTOP Super FREDMeshTM MOSFET
N-CHANNEL 900V - 0.14 OHM - 40A ISOTOP SUPERFREDMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| STE26NA90 6245 -STE26NA90 |
N-Channel 900V-0.25惟-26A-ISOTOP Fast Power MOSFET(N娌??蹇?????MOSFET)
From old datasheet system
N - CHANNEL 900V - 0.25ohm- 26A - ISOTOP FAST POWER MOSFET
N - CHANNEL 900V - 0.25 Ohm - 26A - ISOTOP FAST POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| 2MBI50F-060 |
IGBT(600V 50A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| PRHMB50A6A |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PBMB50A6 |
IGBT MODULE H_Bridge 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PRHMB50A6 |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
